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IGB50N60T Технические параметры
Infineon Technologies AG IGB50N60T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 175°C | |
| JESD-609 Code | e3 | |
| Pbfree Code | icon-pbfree yes | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Power Dissipation-Max (Abs) | 333W | |
| Turn On Time | 60 ns | |
| Collector Current-Max (IC) | 100A | |
| Turn Off Time-Nom (toff) | 396 ns | |
| Collector-Emitter Voltage-Max | 600V | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5.7V | |
| RoHS Status | RoHS Compliant |
IGB50N60T Документы
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