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IGT60R190D1S Технические параметры
Infineon Technologies AG IGT60R190D1S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Material | GaN | |
| ECCN (US) | EAR99 | |
| Maximum Drain Source Voltage (V) | 600 | |
| Maximum Gate Source Voltage (V) | -10(Min) | |
| Maximum Continuous Drain Current (mA) | 12500 | |
| Maximum Power Dissipation (mW) | 55500 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Package | HSOF | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 2.3 | |
| Package Length | 9.9 | |
| Package Width | 10.38 | |
| PCB changed | 8 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tab | Tab | |
| Package Description | , | |
| Moisture Sensitivity Levels | 3 | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IGT60R190D1S | |
| Manufacturer | Infineon Technologies AG | |
| Part Life Cycle Code | Active | |
| Samacsys Description | Trans JFET N-CH 600V 12.5A GaN 9-Pin(8+Tab) HSOF T/R | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 2.28 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| Reach Compliance Code | compliant | |
| Pin Count | 9 | |
| Configuration | Single Hex Source | |
| Channel Type | N | |
| RoHS Status | Yes with exemptions |
Индекс :
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