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IMW120R060M1H Технические параметры

Infineon Technologies AG  IMW120R060M1H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Contact plating gold-plated
Surface Mount NO
Number of pins 64pins
Number of Terminals 3Terminals
Transistor Element Material SILICON CARBIDE
Exterior Housing Material 1
Type of connector pin strips
Connector socket
Kind of connector female
Spatial orientation straight
Contacts pitch 2.54mm
Electrical mounting THT
Connector pinout layout 2x32
Row pitch 2.54mm
Gross weight 2.24 g
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Drain Current-Max (ID) 36 A
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Свойство продукта Значение свойства
Operating temperature -40...163°C
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish TIN
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Current rating 1.5A
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247
Drain-source On Resistance-Max 0.106 Ω
Pulsed Drain Current-Max (IDM) 76 A
DS Breakdown Voltage-Min 1200 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 150 W
Rated voltage 60V
Feedback Cap-Max (Crss) 6.5 pF
Profile beryllium copper
Plating thickness 0.254µm
Flammability rating UL94V-0

IMW120R060M1H Документы

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