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IRFR3704Z Технические параметры
Infineon Technologies AG IRFR3704Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Mounting Type | through hole | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Long-term Frequency Instability (Aging) | max. ± 5 ppm/ year | |
| Gross Weight | 0.59 | |
| Transport Package Size/Quantity | 42*28*18.5/5000 | |
| Package | miniature - US size | |
| Deviation | ± 30 ppm temperature characteristic (-20…+70 °C) | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 30 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Type | HC49 Quartz Resonator | |
| Resistance | ESR max - 50 Ohm |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Capacitance | 16 pF | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | 6 MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Frequency Stability | ± 20 (at T=25 °C) ppm | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation Resistance | 500 (at Uappl.dc=100 V) MOhm min | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | -20…+70 °C | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.0084 Ω | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| DS Breakdown Voltage-Min | 20 V | |
| Avalanche Energy Rating (Eas) | 41 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | 1 |
Индекс :
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