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PTFA080551EV4XWSA1 Технические параметры
Infineon Technologies AG PTFA080551EV4XWSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Process Technology | LDMOS | |
| Maximum Drain Source Voltage (V) | 65 | |
| Maximum Gate Source Voltage (V) | 12 | |
| Maximum VSWR | 10 | |
| Maximum Drain Source Resistance (mOhm) | 150(Typ)@10V | |
| Maximum Power Dissipation (mW) | 219000 | |
| Output Power (W) | 55 | |
| Typical Power Gain (dB) | 18.5 | |
| Maximum Frequency (MHz) | 960 | |
| Minimum Frequency (MHz) | 869 | |
| Typical Drain Efficiency (%) | 48 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 200 | |
| AEC Qualified | No | |
| Supplier Package | Case 36265 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Military | No | |
| Mounting | Screw | |
| Package Height | 3.61 | |
| Package Length | 20.31 | |
| Package Width | 10.16 | |
| PCB changed | 3 | |
| Number of Elements per Chip | 1 | |
| Channel Mode | Enhancement | |
| ECCN (US) | EAR99 | |
| Packaging | Tray | |
| Part Status | Obsolete | |
| Pin Count | 3 | |
| Configuration | Single | |
| Channel Type | N | |
| Mode of Operation | 2-Tone|EDGE | |
| RoHS Status | RoHS Compliant |
PTFA080551EV4XWSA1 Документы
- datasheetsinfineontechnologiesag-ptfa080551ev4xwsa1-datasheets-3105.pdf
- Datasheets
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