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70T659S10BFI Технические параметры

Integrated Device Technology (IDT)   70T659S10BFI technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Factory Lead Time 7 Weeks
Mount Surface Mount
Number of Pins 208Pins
Memory Types RAM, SDR, SRAM
Packaging Bulk
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 208Terminations
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1Function
Supply Voltage 2.5V
Terminal Pitch 0.8mm
Pin Count 208
Свойство продукта Значение свойства
Operating Supply Voltage 2.5V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 2.6V
Min Supply Voltage 2.4V
Memory Size 512kB
Number of Ports 2Ports
Nominal Supply Current 445mA
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 17b
Density 4.5 Mb
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Length 15mm
Height Seated (Max) 1.5mm
Width 15mm
Thickness 1.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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70T659S10BFI Документы

70T659S10BFI brand manufacturers: Integrated Device Technology (IDT) , Anli stock, 70T659S10BFI reference price.Integrated Device Technology (IDT) . 70T659S10BFI parameters, 70T659S10BFI Datasheet PDF and pin diagram description download.You can use the 70T659S10BFI Memory, DSP Datesheet PDF, find 70T659S10BFI pin diagram and circuit diagram and usage method of function,70T659S10BFI electronics tutorials.You can download from the Anli.