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70V659S12BF Технические параметры

Integrated Device Technology (IDT)   70V659S12BF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Factory Lead Time 7 Weeks
Mount Surface Mount
Number of Pins 208Pins
Memory Types RAM, SDR, SRAM
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 208Terminations
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1Function
Supply Voltage 3.3V
Terminal Pitch 0.8mm
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 208
Свойство продукта Значение свойства
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.45V
Min Supply Voltage 3.15V
Memory Size 512kB
Number of Ports 2Ports
Nominal Supply Current 465mA
Access Time 12 ns
Output Characteristics 3-STATE
Address Bus Width 34b
Density 4.5 Mb
Standby Current-Max 0.015A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Length 15mm
Width 15mm
Thickness 1.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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70V659S12BF Документы

70V659S12BF brand manufacturers: Integrated Device Technology (IDT) , Anli stock, 70V659S12BF reference price.Integrated Device Technology (IDT) . 70V659S12BF parameters, 70V659S12BF Datasheet PDF and pin diagram description download.You can use the 70V659S12BF Memory, DSP Datesheet PDF, find 70V659S12BF pin diagram and circuit diagram and usage method of function,70V659S12BF electronics tutorials.You can download from the Anli.