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IDT71256L35TDB Технические параметры
Integrated Device Technology (IDT) IDT71256L35TDB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 28Terminals | |
| Package Description | DIP, DIP28,.3 | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | 1 | |
| Number of Words Code | 32000Words Codes | |
| Package Body Material | CERAMIC, GLASS-SEALED | |
| Package Equivalence Code | DIP28,.3 | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | 20 | |
| Access Time-Max | 35 ns | |
| Operating Temperature-Max | 125 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | IDT71256L35TDB | |
| Number of Words | 32768 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | DIP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Integrated Device Technology Inc | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INTEGRATED DEVICE TECHNOLOGY INC | |
| Risk Rank | 5.08 | |
| Part Package Code | DIP | |
| Usage Level | Military grade | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | 3A001.A.2.C | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | SRAMs |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Technology | CMOS | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 28 | |
| JESD-30 Code | R-GDIP-T28 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Power Supplies | 5 V | |
| Temperature Grade | MILITARY | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Number of Ports | 1Port | |
| Operating Mode | ASYNCHRONOUS | |
| Supply Current-Max | 0.12 mA | |
| Organization | 32KX8 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 5.08 mm | |
| Memory Width | 8 | |
| Standby Current-Max | 0.0005 A | |
| Memory Density | 262144 bit | |
| Screening Level | MIL-STD-883 Class B | |
| Parallel/Serial | PARALLEL | |
| I/O Type | COMMON | |
| Memory IC Type | STANDARD SRAM | |
| Standby Voltage-Min | 2 V | |
| Output Enable | YES | |
| Width | 7.62 mm | |
| Length | 37.1475 mm |
Индекс :
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