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- IDT71V416S10BEG
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IDT71V416S10BEG Технические параметры
Integrated Device Technology (IDT) IDT71V416S10BEG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 48Terminals | |
| Package Description | BGA, BGA48,6X8,30 | |
| Package Style | GRID ARRAY | |
| Moisture Sensitivity Levels | 3 | |
| Number of Words Code | 256000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | BGA48,6X8,30 | |
| Reflow Temperature-Max (s) | 30 | |
| Access Time-Max | 10 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IDT71V416S10BEG | |
| Number of Words | 262144 wordsWord | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Package Code | BGA | |
| Package Shape | SQUARE | |
| Manufacturer | Integrated Device Technology Inc | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INTEGRATED DEVICE TECHNOLOGY INC | |
| Risk Rank | 5.23 | |
| Part Package Code | BGA | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | 3A991.B.2.A | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| HTS Code | 8542.32.00.41 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | SRAMs | |
| Technology | CMOS | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.75 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 48 | |
| JESD-30 Code | S-PBGA-B48 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Power Supplies | 3.3 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Operating Mode | ASYNCHRONOUS | |
| Supply Current-Max | 0.2 mA | |
| Organization | 256KX16 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 16 | |
| Standby Current-Max | 0.02 A | |
| Memory Density | 4194304 bit | |
| Parallel/Serial | PARALLEL | |
| I/O Type | COMMON | |
| Memory IC Type | STANDARD SRAM | |
| Standby Voltage-Min | 3 V | |
| Width | 9 mm | |
| Length | 9 mm |
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