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6116L150DB Технические параметры

Integrated Device Technology Inc  6116L150DB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Surface Mount NO
Number of Terminals 16Terminals
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code DIP
Package Description 0.300 INCH, CERAMIC, DIP-16
Access Time-Max 150 ns
Number of Words 2048 wordsWord
Number of Words Code 2000Words Codes
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Equivalence Code DIP24,.6
Package Shape RECTANGULAR
Package Style IN-LINE
Supply Voltage-Nom (Vsup) 5 V
JESD-609 Code e0
ECCN Code 3A001.A.2.C
Terminal Finish TIN LEAD
HTS Code 8542.32.00.41
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form THROUGH-HOLE
Number of Functions 1Function
Terminal Pitch 2.54 mm
Reach Compliance Code not_compliant
Pin Count 16
JESD-30 Code R-CDIP-T16
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.5 V
Temperature Grade MILITARY
Supply Voltage-Min (Vsup) 4.5 V
Operating Mode ASYNCHRONOUS
Supply Current-Max 0.08 mA
Organization 2KX8
Output Characteristics 3-STATE
Seated Height-Max 5.08 mm
Memory Width 8
Standby Current-Max 0.0003 A
Memory Density 16384 bit
Screening Level MIL-STD-883 Class B
Parallel/Serial PARALLEL
I/O Type COMMON
Memory IC Type STANDARD SRAM
Standby Voltage-Min 2 V
Length 20.066 mm
Width 7.62 mm
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6116L150DB Документы

  • Datasheets
6116L150DB brand manufacturers: Integrated Device Technology Inc, Anli stock, 6116L150DB reference price.Integrated Device Technology Inc. 6116L150DB parameters, 6116L150DB Datasheet PDF and pin diagram description download.You can use the 6116L150DB Memory, DSP Datesheet PDF, find 6116L150DB pin diagram and circuit diagram and usage method of function,6116L150DB electronics tutorials.You can download from the Anli.