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- IS43DR83200A-3DBLI
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IS43DR83200A-3DBLI Технические параметры
Integrated Silicon Solution, Inc. (ISSI) IS43DR83200A-3DBLI technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory Connectors - Accessories | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Surface Mount | YES | |
| Mount | Surface Mount | |
| Number of Pins | 60Pins | |
| Number of Terminals | 60Terminals | |
| Manufacturer Part Number | IS43DR83200A-3DBLI | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Risk Rank | 5.84 | |
| Access Time-Max | 0.45 ns | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| Number of Words | 33554432 wordsWord | |
| Number of Words Code | 32000000Words Codes | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Reflow Temperature-Max (s) | 40 | |
| RoHS | Compliant | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Operating Temperature | 85 °C | |
| Min Operating Temperature | -40 °C | |
| Additional Feature | AUTO/SELF REFRESH | |
| HTS Code | 8542.32.00.24 | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Functions | 1Function | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 60 | |
| JESD-30 Code | R-PBGA-B60 | |
| Qualification Status | Not Qualified | |
| Operating Supply Voltage | 1.8 V | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Power Supplies | 1.8 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Max Supply Voltage | 1.9 V | |
| Min Supply Voltage | 1.7 V | |
| Memory Size | 32 MB | |
| Number of Ports | 1Port | |
| Nominal Supply Current | 330 mA | |
| Operating Mode | SYNCHRONOUS | |
| Max Supply Current | 135 mA | |
| Supply Current-Max | 0.33 mA | |
| Access Time | 3 ns | |
| Data Bus Width | 8 b | |
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 8 | |
| Address Bus Width | 15 b | |
| Density | 256 Mb | |
| Standby Current-Max | 0.005 A | |
| Memory Density | 268435456 bit | |
| Max Frequency | 333 MHz | |
| I/O Type | COMMON | |
| Memory IC Type | DDR DRAM | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 4,8 | |
| Interleaved Burst Length | 4,8 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Self Refresh | YES | |
| Length | 10.5 mm | |
| Width | 8 mm |
Индекс :
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