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BCW60DE6327HTSA1 Технические параметры
International Rectifier BCW60DE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | International Rectifier | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 | |
| Voltage, Rating | 50 V | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current-Collector (Ic) (Max) | 100mA | |
| Other Names | BCW 60D E6327 BCW 60D E6327-ND BCW 60D E6327TR-ND BCW60DE6327 BCW60DE6327BTSA1 BCW60DE6327HTSA1TR BCW60DE6327XT SP000010549 | |
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Tolerance | 1 % | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Temperature Coefficient | 25 ppm/°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Resistance | 2.71 kΩ | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Power Rating | 100 mW | |
| Base Part Number | BCW60 | |
| Power - Max | 330mW | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA, 5V | |
| Current - Collector Cutoff (Max) | 20nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 32V | |
| Frequency - Transition | 250MHz | |
| Height | 550 µm |
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