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IRF1010EZ Технические параметры

International Rectifier  IRF1010EZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка International Rectifier
Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Drain Current-Max (ID) 75 A
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 225
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0085 Ω
Pulsed Drain Current-Max (IDM) 340 A
DS Breakdown Voltage-Min 60 V
Avalanche Energy Rating (Eas) 99 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 140 W

IRF1010EZ Документы

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