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IRFHE4250DTRPBF Технические параметры

International Rectifier  IRFHE4250DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка International Rectifier
Mounting Type Surface Mount
Package / Case 32-PowerVFQFN
Supplier Device Package 32-PQFN (6x6)
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 86A (Tc), 303A (Tc)
Mfr International Rectifier
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Свойство продукта Значение свойства
Series HEXFET®
Power - Max 156W (Tc)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35µA, 2.1V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 13V, 4765pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V, 53nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
FET Feature Standard
Просмотр сходства
IRFHE4250DTRPBF brand manufacturers: International Rectifier, Anli stock, IRFHE4250DTRPBF reference price.International Rectifier. IRFHE4250DTRPBF parameters, IRFHE4250DTRPBF Datasheet PDF and pin diagram description download.You can use the IRFHE4250DTRPBF Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRFHE4250DTRPBF pin diagram and circuit diagram and usage method of function,IRFHE4250DTRPBF electronics tutorials.You can download from the Anli.