Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IRFR2905Z Технические параметры
International Rectifier IRFR2905Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | International Rectifier | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | PLASTIC, DPAK-3 | |
| Drain Current-Max (ID) | 42 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Gross weight | 10.98 | |
| Transport packaging size/quantity | 38*33*25/2000 | |
| Teral type | solderingmin | |
| Terals | wire (d) Ф0.75min | |
| Tolerance | 5% | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | Power wirewound constant resistor in ceramic-cement body RX27-1 | |
| Resistance | 1.2 kOhm | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 245 | |
| Depth | (L) 48 ± 1 mm | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | 1000 MOhm min | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -55…+155 (275 max.) °C | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.0145 Ω | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 82 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 110 W | |
| Power | 10 (SQP10) W | |
| Saturation Current | 1 | |
| Height | (H) 9 ± 1 mm | |
| Width | (W) 10 ± 1 mm |
IRFR2905Z Документы
- Datasheetsae383dd1d2cd28cfce58f0fabccbfeec.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ