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IRFR3708TRPBF Технические параметры
International Rectifier IRFR3708TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | International Rectifier | |
| Surface Mount | YES | |
| Material | tinned brass | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Transport package size/quantity | 47*34*21.5/5000 | |
| Maximum current | 27 A | |
| Contact diameter | inner d2 = 4.3 mm/ outer B = 8.5 mm | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | LEAD FREE, PLASTIC, DPAK-3 | |
| Drain Current-Max (ID) | 30 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Gross weight | 0.73 | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | insulated ring terminal type "O" | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | L - 22.5 mm | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Dielectric | PVC (color - red) | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.0125 Ω | |
| Pulsed Drain Current-Max (IDM) | 244 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Wire cross section | 16-14 AWG; 1.5…2.5 mm2 | |
| Avalanche Energy Rating (Eas) | 213 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 87 W | |
| Saturation Current | 1 | |
| Length | insulator - 10 mm (diameter D - Ф4.9 mm) mm |
IRFR3708TRPBF Документы
- Datasheets5f8943f9afd6bfbfc275059eecde1f49.pdf
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