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International Rectifier IRFR4104TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | International Rectifier | |
| Mounting type | through hole | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Gross weight | 1.03 | |
| Transport packaging size/quantity | 28.5*21*19/3000 | |
| Package | miniature - U size | |
| Temperature stability | temperature characteristic ± 30 ppm (-20…+70 °C) | |
| Long term frequency stability (aging) | max. ± 5 ppm/ year | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | LEAD FREE, PLASTIC, DPAK-3 | |
| Drain Current-Max (ID) | 42 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Mfr | ams-OSRAM USA INC. | |
| Series | Power TOPLED® | |
| Packaging | Tape & Reel (TR);Cut Tape (CT);Digi-Reel® | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | HC49 series quartz resonator | |
| Resistance | ESR max - 50 Ohm |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Capacitance | 20 pF | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | package - 10.2 max; full - 11.05 max mm | |
| Reach Compliance Code | compliant | |
| Frequency | 2.4576 MHz | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Frequency stability | ± 20 (at T=25 °C) ppm | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | ≥500 (at Uis.dc=100 V) MOhm | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -20 …+70 °C | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 145 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 140 W | |
| Saturation Current | 1 | |
| Height | 13.2 (package) mm | |
| Width | package - 3.7 max; full - 4.65 max mm |