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IRGB4B60KD1PBF Технические параметры

International Rectifier  IRGB4B60KD1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка International Rectifier
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Collector-Emitter Breakdown Voltage 600 V
Voltage Rating (DC) 600 V
RoHS Compliant
Package Bulk
Current-Collector (Ic) (Max) 11 A
Mfr International Rectifier
Product Status Obsolete
Test Conditions 400V, 4A, 100Ohm, 15V
Packaging Bulk
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Max Power Dissipation 63 W
Current Rating 11 A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 63 W
Input Type Standard
Power - Max 63 W
Rise Time 18 ns
Collector Emitter Voltage (VCEO) 2.5 V
Max Collector Current 11 A
Reverse Recovery Time 93 ns
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
IGBT Type NPT
Gate Charge 12 nC
Current - Collector Pulsed (Icm) 22 A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 73µJ (on), 47µJ (off)
Reverse Recovery Time (trr) 93 ns
Width 4.69 mm
Height 15.24 mm
Length 10.5156 mm
Radiation Hardening No
Lead Free Lead Free
Просмотр сходства
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