Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IRL3713STRLPBF Технические параметры
International Rectifier IRL3713STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | International Rectifier | |
| Surface Mount | YES | |
| Weight | 0.4 kg | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Type of capacitor | ceramic | |
| Kind of capacitor | MLCC | |
| Mounting | SMD | |
| Case - inch | 1206 | |
| Case - mm | 3216 | |
| Capacitors series | KGM | |
| Gross weight | 415.00 | |
| Transport packaging size/quantity | 29*25*40/30 | |
| Analog | POS40 | |
| Execution | tube | |
| Melting temperature | 183...240 °C | |
| Soldering temperature | 285...330 °C | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 75 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Operating temperature | -55...125°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | coil | |
| Tolerance | ±5% | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | Soft tin-lead solder Sn/Pb with flux | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Capacitance | 10pF | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Dielectric | C0G (NP0) | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| Pulsed Drain Current-Max (IDM) | 1040 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 1530 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 330 W | |
| Saturation Current | 1 | |
| Operating voltage | 1kV | |
| Diameter | 1.5 mm |
IRL3713STRLPBF Документы
- Datasheetsa523e1ffa0e23899f56bd8894462de0c.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ