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International Rectifier IRLR3410 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | International Rectifier | |
| Surface Mount | YES | |
| Weight | 100 g | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Coil resistance | L (high-sensitivity) - 1600/ D (normal) - 1280 Ohm | |
| Maximum current | switching - 10 A | |
| Gross weight | 8.00 | |
| Transport packaging size/quantity | 34*21*16/1000 | |
| Switching Scheme | SPDT; form C | |
| Number of electrical cycles (switching) | 100000 min | |
| Dielectric strength | between open contacts and coil - 1500 VAC 1min. V | |
| Rated coil voltage | 24 DC (Umaks.=31.2) V | |
| Operate voltage | 18.0 (max) V | |
| Release voltage | 1.2 V | |
| Time | operation - 10/ release - 5 ms | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | PLASTIC, DPAK-3 | |
| Drain Current-Max (ID) | 17 A | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Type | T73 Series Electromagnetic Relay | |
| Terminal Finish | TIN LEAD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Depth | 19.5 mm | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Contact resistance | 50 (at Udc=6V; I=1A) mOhm mOhm max | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | 100 (at Uispl.dc=500 V) MOhm min | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -40…+85 °C | |
| Switching voltage | 250 AC/ 30 DC V | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 79 W | |
| Power | coil - L (high-sensitivity) - 360/ D (normal) - 450 (DC) mW | |
| Feedback Cap-Max (Crss) | 90 pF | |
| Saturation Current | 1 | |
| Standard | safety - UL TUV CE CQC | |
| Height | 15.9 (housing) mm | |
| Width | 15.5 mm |