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- HGT1S20N35G3VLS
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HGT1S20N35G3VLS Технические параметры
Intersil HGT1S20N35G3VLS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Intersil | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | TO-263AB, 3 PIN | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-off Time-Nom (toff) | 15000 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | HGT1S20N35G3VLS | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Fairchild Semiconductor Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Risk Rank | 5.04 | |
| Part Package Code | D2PAK |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| Terminal Finish | Matte Tin (Sn) | |
| Subcategory | Insulated Gate BIP Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Case Connection | COLLECTOR | |
| Transistor Application | AUTOMOTIVE IGNITION | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Power Dissipation-Max (Abs) | 150 W | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 320 V | |
| Gate-Emitter Voltage-Max | 12 V | |
| Gate-Emitter Thr Voltage-Max | 2.3 V |
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