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IRFBC40R Технические параметры
Intersil IRFBC40R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Intersil | |
| Package / Case | Axial | |
| Surface Mount | NO | |
| Supplier Device Package | Axial | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Base Product Number | RNC60 | |
| Mfr | Vishay Dale | |
| Product Status | Active | |
| RoHS | Non-Compliant | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Manufacturer Part Number | IRFBC40R | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.21 | |
| Drain Current-Max (ID) | 6.2 A | |
| Operating Temperature | -65°C ~ 175°C | |
| Series | Military, MIL-PRF-55182/03, RNC60 | |
| Size / Dimension | 0.097 Dia x 0.280 L (2.46mm x 7.11mm) | |
| Tolerance | ±0.1% |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | ±25ppm/°C | |
| Resistance | 324 kOhms | |
| Terminal Finish | TIN LEAD | |
| Composition | Metal Film | |
| Power (Watts) | 0.25W, 1/4W | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Failure Rate | S (0.001%) | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-220AB | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 570 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Features | Military, Moisture Resistant, Weldable | |
| Height Seated (Max) | - |
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