Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
APT6017WVR Технические параметры
ISC APT6017WVR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ISC | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | TO-267, 3 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 125 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | APT6017WVR | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.29 | |
| Part Package Code | TO-267AA | |
| Drain Current-Max (ID) | 31.5 A | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | No | |
| Terminal Finish | TIN LEAD | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-MSFM-P3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-267AA | |
| Drain Current-Max (Abs) (ID) | 31.5 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 450 W |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ