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H5N2503P-E Технические параметры
ISC H5N2503P-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ISC | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Base Product Number | KJB6T | |
| Mfr | ITT Cannon, LLC | |
| Product Status | Active | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PRSS0004ZE-A4 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | H5N2503P-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.24 | |
| Part Package Code | TO-3P |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drain Current-Max (ID) | 50 A | |
| Series | * | |
| JESD-609 Code | e2 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| DS Breakdown Voltage-Min | 250 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 150 W |
Индекс :
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