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DSEI12-12AZ Технические параметры

IXYS  DSEI12-12AZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка IXYS
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 1200
Maximum Continuous Forward Current (A) 11
Peak Non-Repetitive Surge Current (A) 75
Peak Forward Voltage (V) 2.6@24A
Peak Reverse Current (uA) 250
Maximum Power Dissipation (mW) 78000
Peak Reverse Recovery Time (ns) 50(Typ)
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Supplier Package D2Pak-HV
Military No
Mounting Surface Mount
Package Height 4.83(Max)
Package Length 10.41(Max)
Package Width 9.4(Max)
PCB changed 2
Tab Tab
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -40 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number DSEI12-12AZ
Свойство продукта Значение свойства
Power Dissipation (Max) 78 W
Package Shape RECTANGULAR
Manufacturer Littelfuse Inc
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Forward Voltage-Max (VF) 2.6 V
Risk Rank 5.62
Part Status Active
Type Switching Diode
Applications FAST SOFT RECOVERY
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE, SNUBBER DIODE
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 3
Reference Standard IEC-60747
JESD-30 Code R-PSSO-G2
Configuration Single Dual Anode
Diode Type RECTIFIER DIODE
Case Connection CATHODE
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 1200 V
JEDEC-95 Code TO-263AB
Non-rep Pk Forward Current-Max 70 A
Reverse Current-Max 250 µA
Reverse Recovery Time-Max 0.07 µs
RoHS Status RoHS Compliant

DSEI12-12AZ Документы

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