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FMM150-0075X2F Технические параметры
IXYS FMM150-0075X2F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | IXYS | |
| Factory Lead Time | 30 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | ISOPLUSi5-Pak™ | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HiPerFET™, TrenchT2™ | |
| Published | 2009 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AVALANCHE RATED, UL RECOGNIZED | |
| Max Power Dissipation | 170W | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 5 | |
| JESD-30 Code | R-PSIP-T5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 170W | |
| Case Connection | ISOLATED | |
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 10500pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 178nC @ 10V | |
| Drain to Source Voltage (Vdss) | 75V | |
| Continuous Drain Current (ID) | 120A | |
| Drain-source On Resistance-Max | 0.0058Ohm | |
| Pulsed Drain Current-Max (IDM) | 500A | |
| DS Breakdown Voltage-Min | 75V | |
| Avalanche Energy Rating (Eas) | 850 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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