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IXBH10N170 Технические параметры

IXYS  IXBH10N170 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Number of Elements 1 Element
Test Conditions 1360V, 10A, 56 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series BIMOSFET™
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 140W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 140W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 20A
Reverse Recovery Time 360 ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 63 ns
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 10A
Turn Off Time-Nom (toff) 1800 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 35ns/500ns
Switching Energy 6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
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IXBH10N170 Документы

IXBH10N170 brand manufacturers: IXYS, Anli stock, IXBH10N170 reference price.IXYS. IXBH10N170 parameters, IXBH10N170 Datasheet PDF and pin diagram description download.You can use the IXBH10N170 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXBH10N170 pin diagram and circuit diagram and usage method of function,IXBH10N170 electronics tutorials.You can download from the Anli.