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IXBH16N170 Технические параметры

IXYS  IXBH16N170 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Number of Elements 1 Element
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series BIMOSFET™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.7kV
Max Power Dissipation 250W
Свойство продукта Значение свойства
Current Rating 16A
Pin Count 3
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Power - Max 250W
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 40A
Reverse Recovery Time 1.32 μs
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 220 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 16A
Turn Off Time-Nom (toff) 940 ns
Gate Charge 72nC
Current - Collector Pulsed (Icm) 120A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXBH16N170 Документы

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