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IXBH40N160 Технические параметры

IXYS  IXBH40N160 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.6kV
Number of Elements 1 Element
Test Conditions 960V, 20A, 22 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series BIMOSFET™
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
Additional Feature BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS
Voltage - Rated DC 1.6kV
Max Power Dissipation 350W
Current Rating 33A
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 60ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6kV
Max Collector Current 33A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1600V
Turn On Time 260 ns
Vce(on) (Max) @ Vge, Ic 7.1V @ 15V, 20A
Turn Off Time-Nom (toff) 310 ns
Gate Charge 130nC
Current - Collector Pulsed (Icm) 40A
Gate-Emitter Voltage-Max 20V
VCEsat-Max 6 V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 700ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
IXBH40N160 brand manufacturers: IXYS, Anli stock, IXBH40N160 reference price.IXYS. IXBH40N160 parameters, IXBH40N160 Datasheet PDF and pin diagram description download.You can use the IXBH40N160 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXBH40N160 pin diagram and circuit diagram and usage method of function,IXBH40N160 electronics tutorials.You can download from the Anli.