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IXBH6N170 Технические параметры

IXYS  IXBH6N170 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series BIMOSFET™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Свойство продукта Значение свойства
Max Power Dissipation 75W
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 75W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 12A
Reverse Recovery Time 1.08 μs
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 104 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 6A
Turn Off Time-Nom (toff) 700 ns
Gate Charge 17nC
Current - Collector Pulsed (Icm) 36A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXBH6N170 Документы

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