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IXBH9N160G Технические параметры

IXYS  IXBH9N160G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.6kV
Collector-Emitter Saturation Voltage 4.9V
Number of Elements 1 Element
Test Conditions 960V, 5A, 27 Ω, 10V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series BIMOSFET™
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6kV
Max Collector Current 9A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1600V
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 7V @ 15V, 5A
Turn Off Time-Nom (toff) 190 ns
Gate Charge 34nC
Current - Collector Pulsed (Icm) 10A
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXBH9N160G Документы

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