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IXBT10N170 Технические параметры

IXYS  IXBT10N170 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Number of Elements 1 Element
Test Conditions 1360V, 10A, 56 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series BIMOSFET™
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish PURE TIN
Max Power Dissipation 140W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 140W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 20A
Reverse Recovery Time 360 ns
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 63 ns
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 10A
Turn Off Time-Nom (toff) 1800 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 35ns/500ns
Switching Energy 6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant

IXBT10N170 Документы

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