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IXDH30N120 Технические параметры

IXYS  IXDH30N120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 30A, 47 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature LOW SWITCHING LOSSES
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number IXD*30N120
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 76A
Switching Energy 4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
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IXDH30N120 Документы

IXDH30N120 brand manufacturers: IXYS, Anli stock, IXDH30N120 reference price.IXYS. IXDH30N120 parameters, IXDH30N120 Datasheet PDF and pin diagram description download.You can use the IXDH30N120 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXDH30N120 pin diagram and circuit diagram and usage method of function,IXDH30N120 electronics tutorials.You can download from the Anli.