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IXFA36N20X3 Технические параметры

IXYS  IXFA36N20X3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 19 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 36A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 176W Tc
Operating Temperature -55°C~150°C TJ
Series HiPerFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 36A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 300 mJ
RoHS Status ROHS3 Compliant
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IXFA36N20X3 Документы

IXFA36N20X3 brand manufacturers: IXYS, Anli stock, IXFA36N20X3 reference price.IXYS. IXFA36N20X3 parameters, IXFA36N20X3 Datasheet PDF and pin diagram description download.You can use the IXFA36N20X3 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFA36N20X3 pin diagram and circuit diagram and usage method of function,IXFA36N20X3 electronics tutorials.You can download from the Anli.