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IXFA36N60X3 Технические параметры

IXYS  IXFA36N60X3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA (IXFA)
Mfr IXYS
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 446W (Tc)
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-On Delay Time 23 ns
Vgs th - Gate-Source Threshold Voltage 5 V
Pd - Power Dissipation 446 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer IXYS
Brand IXYS
Свойство продукта Значение свойства
Qg - Gate Charge 29 nC
Tradename HiPerFET
Rds On - Drain-Source Resistance 90 mOhms
RoHS Details
Typical Turn-Off Delay Time 45 ns
Id - Continuous Drain Current 36 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Rise Time 8 ns
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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