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IXFA4N100Q Технические параметры

IXYS  IXFA4N100Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Turn Off Delay Time 32 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Resistance 3Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 700 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFA4N100Q Документы

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