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IXFB100N50P Технические параметры

IXYS  IXFB100N50P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 35 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1890W Tc
Turn Off Delay Time 110 ns
Packaging Tube
Series HiPerFET™, PolarHT™
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Resistance 49MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 29ns
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 5000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFB100N50P Документы

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