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IXFB120N50P2 Технические параметры

IXYS  IXFB120N50P2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1890W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarHV™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.89kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.043Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 4000 mJ
RoHS Status ROHS3 Compliant
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IXFB120N50P2 Документы

IXFB120N50P2 brand manufacturers: IXYS, Anli stock, IXFB120N50P2 reference price.IXYS. IXFB120N50P2 parameters, IXFB120N50P2 Datasheet PDF and pin diagram description download.You can use the IXFB120N50P2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFB120N50P2 pin diagram and circuit diagram and usage method of function,IXFB120N50P2 electronics tutorials.You can download from the Anli.