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IXFC13N50 Технические параметры

IXYS  IXFC13N50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS220™
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 76 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 27ns
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
RoHS Status RoHS Compliant

IXFC13N50 Документы

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