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IXFH15N80 Технические параметры

IXYS  IXFH15N80 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 15A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 63 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
Pbfree Code yes
Part Status Active
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 600mOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Current Rating 15A
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 33ns
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 4.5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 800V
Nominal Vgs 4.5 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFH15N80 Документы

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