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IXFH18N100Q3 Технические параметры

IXYS  IXFH18N100Q3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 830W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 37 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 660m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 6.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.66Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 60A
Height 16.26mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFH18N100Q3 Документы

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