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IXFH36N60P Технические параметры

IXYS  IXFH36N60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 36A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 650W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarHT™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 650W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 25ns
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 1500 mJ
Height 21.46mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFH36N60P Документы

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