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IXFH50N20 Технические параметры

IXYS  IXFH50N20 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 200V
Свойство продукта Значение свойства
Current Rating 50A
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 15ns
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 200A
Dual Supply Voltage 200V
Recovery Time 200 ns
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFH50N20 Документы

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