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IXFH58N20 Технические параметры
IXYS IXFH58N20 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 58A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 300W Tc | |
| Turn Off Delay Time | 72 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HiPerFET™ | |
| Published | 2000 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 40mOhm | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 200V | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 58A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 300W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 29A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 4mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V | |
| Rise Time | 15ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 16 ns | |
| Continuous Drain Current (ID) | 58A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Dual Supply Voltage | 200V | |
| Recovery Time | 200 ns | |
| Nominal Vgs | 4 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IXFH58N20 Документы
- DatasheetsIXF(H,M,T)(42,50,58)N20
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