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IXFH67N10 Технические параметры

IXYS  IXFH67N10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 67A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 67A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 33.5A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 67A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 268A
RoHS Status Non-RoHS Compliant
Просмотр сходства

IXFH67N10 Документы

IXFH67N10 brand manufacturers: IXYS, Anli stock, IXFH67N10 reference price.IXYS. IXFH67N10 parameters, IXFH67N10 Datasheet PDF and pin diagram description download.You can use the IXFH67N10 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFH67N10 pin diagram and circuit diagram and usage method of function,IXFH67N10 electronics tutorials.You can download from the Anli.