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IXFH6N100 Технические параметры

IXYS  IXFH6N100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 180W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 2Ohm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
HTS Code 8541.29.00.95
Voltage - Rated DC 1kV
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 6A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 24A
Dual Supply Voltage 1kV
Recovery Time 250 ns
Nominal Vgs 4.5 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFH6N100 Документы

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