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IXFH6N120 Технические параметры

IXYS  IXFH6N120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 42 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status ROHS3 Compliant

IXFH6N120 Документы

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