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IXFH76N07-11 Технические параметры

IXYS  IXFH76N07-11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 76A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 130 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 11mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 70V
Свойство продукта Значение свойства
Current Rating 76A
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 70ns
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 76A
Threshold Voltage 3.4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 70V
Dual Supply Voltage 70V
Avalanche Energy Rating (Eas) 2000 mJ
Nominal Vgs 3.4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFH76N07-11 Документы

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