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IXFH7N100P Технические параметры

IXYS  IXFH7N100P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Current - Continuous Drain (Id) @ 25℃ 7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 300W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar™
Свойство продукта Значение свойства
Published 2012
Part Status Active
Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 7A
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IXFH7N100P Документы

IXFH7N100P brand manufacturers: IXYS, Anli stock, IXFH7N100P reference price.IXYS. IXFH7N100P parameters, IXFH7N100P Datasheet PDF and pin diagram description download.You can use the IXFH7N100P Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFH7N100P pin diagram and circuit diagram and usage method of function,IXFH7N100P electronics tutorials.You can download from the Anli.