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IXFH80N10Q Технические параметры

IXYS  IXFH80N10Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 68 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 150mOhm
Свойство продукта Значение свойства
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 100V
Current Rating 80A
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 70ns
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IXFH80N10Q Документы

IXFH80N10Q brand manufacturers: IXYS, Anli stock, IXFH80N10Q reference price.IXYS. IXFH80N10Q parameters, IXFH80N10Q Datasheet PDF and pin diagram description download.You can use the IXFH80N10Q Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFH80N10Q pin diagram and circuit diagram and usage method of function,IXFH80N10Q electronics tutorials.You can download from the Anli.